Quartz laganum subiectum
Quartz lagoenae subiecta sunt lana praesertim de excelso {- puritatem quartz (sio₂), late in semiconductors, optoelectronics, micro {{I}}, optical cogitationes, et aliarum), optical cogitationes, et alias. Infra est detailed introductio ad quartz laganum
Description
Materia proprietatibus
(I) excelsum puritatem: typically factum a synthetica quartz (eg, fused silica), cum maxime excelsum puritatis (maius quam vel aequalis ad 99.99%) et minimal ad vitare afficiens fabrica perficientis.
(II) scelerisque stabilitatem: humilis coefficientem de scelerisque expansion (≈0.55 × 10⁻⁶ / gradu) et excelsum {{III}} temperatus (idoneam, {{{V}} temperatus.
(III) Optical euismod: lata tradenda range (UV ad ir), cum eximia UV transmittance, ideal pro Photomes, lentium, etc.
(IV) eget inertness: repugnant ad acida et alkalis (exceptis hydrofluoric acidum), idoneam ad infectum etching processibus.
(5) Electrical Insulation : High resistivity (>10.⁶ ω · cm), idealis pro insulating subiectis aut excelsum {{I}}} Frequency cogitationes.
Applications
Semiconductor vestibulum
Photomy Substrate
VV lithography components
Wafer processus carriers
Photonics & Optoelectronics
Optical Waveguide Substratum
Laser Diode adscendens
Quantum Computing components
Specialty Applications
MEMS resonator bases
Space Telescopium Optics
Excelsus - industria laser systems
Processu
① rudis materia synthesis: produci per vapor depositione (eg, sicl₄ oxidatio) et purificationem naturalis quartz.
② liquescens et formatam, {- Temperature liquescens sequebatur per refrigerationem in ingots aut directe trahit in virgas.
③ Cutting: divisa in tenues wafers per Diamond Pectus Wire varis aut laser secans.
④ molere et politura: chemica mechanica pollaning (CMP) Achieves Nanometer - Level lenitate.
⑤ Purgato et inspectionem: remotionem particularum et metallum contaminantium, sequitur defectus et parameter probatio.
Proprietatibus
|
Physica proprietatibus |
Values |
|
Pudicitia |
＞99.99% |
|
Densitas |
2.2g / cm3 |
|
Dialacritas |
＞90% |
|
Mohs duritiam |
5.5--6.5 |
|
Point deformatio |
MCCLXXX gradus |
|
Softening Point |
MDCCL gradu |
|
Annealing punctum |
MCCL gradu |
|
Specifica calor (20 - 350 gradu) |
670J / kg. gradus |
|
Thermal conductivity (XX gradus) |
1.4W / m. gradus |
|
Conductors calor (W / MK, M gradus) |
1.0-1.2 |
|
Index refractive |
1.4585 |
|
Coefficientem scelerisque expansion |
5.510 -7cm / cm. gradus |
|
Calidum - opus temperatus |
MDCCL ~ MML gradu |
|
{- Term officium temperatus |
MCDL gradu |
|
Long - Term officium temperatus |
MC gradus |
|
Eget proprietatibus |
Values |
|
Acidum repugnant |
Fortis acidum (nisi HF) fortis alkali, organicum solution |
|
High temperaturis corrosio repugnant |
Praeclarus |
|
Metal Metal Content |
|
|
Electrica proprietatibus |
Values |
|
Resistentia |
7107Ω.cm |
|
Vitra Vitra |
CCL ~ 400KV / cm |
|
Dielectric constant |
3.7~3.9 |
|
Dielectric effusio coefficientem |
＜410-4 |
|
Dielectric damnum coefficientem |
＜110-4 |
|
Mechanica proprietatibus |
Values |
|
Compressive fortitudinem |
1100MPA |
|
Flectens vires |
67MPA |
|
Tensile vires |
48MPA |
|
Poisson scriptor Ratio |
0.14~0.17 |
|
Young 's modulo |
72000MPA |
|
Tondendas modulum |
31000MPA |
Quid Elige nobis:
Aliquam:
Customize tua products secundum tuum requisitis
XXIV Online Service:
Domicilii vestri feedback in tempore
Competitive Price:
Factory pretium sed excelsum - Quality
Global shipping:
{- {{I}} ianuam partum
Faq
Q1: Quid est maximum quartz lagoenas subiecta mole praesto?
A: Latin productionem usque ad 300mm diametro, cum 450mm prototypes available for R & d.
Q2 potest providere amet crassitudine profiles?
A: Sic, possumus producere:
Wughed Wafers (quia laser Applications)
Certaed Cogitationes
Mosa {- exstructa superficiebus
Q3: Quid Purgato Protocol tu suadeo?
A: Latin RCA Tersus Processus:
I. Organic remotionem (H₂so₄: H₂o₂)
II. Ionica Purgato (HCL: H₂o₂)
III. HF {{I}} novissimo hydrophilic superficies
Hot Tags: Quartz Wafer substrati, Sina quartz laganum subiectum artifices, amet, officinas
mitte Inquisitionis
Fortasse flebis quoque
